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Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 4

Advanced Gate Stack  Source Drain  and Channel Engineering for Si Based CMOS 4 PDF

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Author: P. J. Timans
Publisher: The Electrochemical Society
ISBN: 1566776260
Size: 22.82 MB
Format: PDF, Kindle
Category : Gate array circuits
Languages : en
Pages : 474
View: 542

Book Description: This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.


Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 6

Advanced Gate Stack  Source Drain  and Channel Engineering for Si Based CMOS 6 PDF

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Author: E. P. Gusev
Publisher: The Electrochemical Society
ISBN: 1566777917
Size: 24.28 MB
Format: PDF, ePub, Mobi
Category : Gate array circuits
Languages : en
Pages : 412
View: 6471

Book Description: These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.


Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 2

Advanced Gate Stack  Source drain  and Channel Engineering for Si based CMOS 2 PDF

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Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 1566775027
Size: 18.40 MB
Format: PDF, ePub, Docs
Category : Gate array circuits
Languages : en
Pages : 460
View: 6549

Book Description: These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.


Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 5 New Materials Processes And Equipment

Advanced Gate Stack  Source Drain  and Channel Engineering for Si Based CMOS 5  New Materials  Processes  and Equipment PDF

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Author: V. Narayanan
Publisher: The Electrochemical Society
ISBN: 1566777097
Size: 49.61 MB
Format: PDF, ePub, Mobi
Category : Gate array circuits
Languages : en
Pages : 353
View: 4354

Book Description: This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.


Chemistry In Microelectronics

Chemistry in Microelectronics PDF

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Author: Yannick Le Tiec
Publisher: John Wiley & Sons
ISBN: 1118578120
Size: 29.63 MB
Format: PDF, ePub, Docs
Category : Technology & Engineering
Languages : en
Pages : 384
View: 6425

Book Description: Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functionality of circuits has increased. This book consists of five chapters covering the chemicals and sequences used in processing, from cleaning to etching, the role and impact of their purity, along with the materials used in “Front End Of the Line” which corresponds to the heart and performance of individual transistors, then moving on to the “Back End Of the Line” which is related to the interconnection of all the transistors. Finally, the need for specific functionalization also requires key knowledge on surface treatments and chemical management to allow new applications. Contents 1. Chemistry in the “Front End of the Line” (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts, François Martin, Jean-Michel Hartmann, Véronique Carron and Yannick Le Tiec. 2. Chemistry in Interconnects, Vincent Jousseaume, Paul-Henri Haumesser, Carole Pernel, Jeffery Butterbaugh, Sylvain Maîtrejean and Didier Louis. 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying, Yannick Le Tiec and Martin Knotter. 4. The Use and Management of Chemical Fluids in Microelectronics, Christiane Gottschalk, Kevin Mclaughlin, Julie Cren, Catherine Peyne and Patrick Valenti. 5. Surface Functionalization for Micro- and Nanosystems: Application to Biosensors, Antoine Hoang, Gilles Marchand, Guillaume Nonglaton, Isabelle Texier-Nogues and Francoise Vinet. About the Authors Yannick Le Tiec is a technical expert at CEA-Leti, Minatec since 2002. He is a CEA-Leti assignee at IBM, Albany (NY) to develop the advanced 14 nm CMOS node and the FDSOI technology. He held different technical positions from the advanced 300 mm SOI CMOS pilot line to different assignments within SOITEC for advanced wafer development and later within INES to optimize solar cell ramp-up and yield. He has been part of the ITRS Front End technical working group at ITRS since 2008.


Physics And Technology Of High K Gate Dielectrics 4

Physics and Technology of High k Gate Dielectrics 4 PDF

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Author: Samares Kar
Publisher: The Electrochemical Society
ISBN: 1566775035
Size: 32.99 MB
Format: PDF
Category : Dielectrics
Languages : en
Pages : 547
View: 1768

Book Description: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.


Graphene Based Nanotechnologies For Energy And Environmental Applications

Graphene based Nanotechnologies for Energy and Environmental Applications PDF

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Author: Mohammad Jawaid
Publisher: Elsevier
ISBN: 0128158123
Size: 75.94 MB
Format: PDF, ePub, Docs
Category : Technology & Engineering
Languages : en
Pages : 446
View: 340

Book Description: Graphene-Based Nanotechnologies for Energy and Environmental Applications explores how graphene-based materials are being used to make more efficient, reliable products and devices for energy storage and harvesting and environmental monitoring and purification. The book outlines the major sustainable, recyclable, and eco-friendly methods for using a range of graphene-based materials in innovative ways. It represents an important information source for materials scientists and engineers who want to learn more about the use of graphene-based nanomaterials to create the next generation of products and devices in energy and environmental science. Graphene-based nanotechnologies are at the heart of some of the most exciting developments in the fields of energy and environmental research. Graphene has exceptional properties, which are being used to create more effective products for electronic systems, environmental sensing devices, energy storage, electrode materials, fuel cell, novel nano-sorbents, membrane and photocatalytic degradation of environmental pollutants especially in the field of water and wastewater treatment. Covers synthesis, preparation and application of graphene based nanomaterials from different sources Demonstrates systematic approaches to the design, synthesis, characterization and applications of graphene-based nanocomposites in order to establish their important relationship with end-user applications Discusses the challenges in ensuring reliability and scalability of graphene-based nanotechnologies


Chimie En Micro Lectronique

Chimie en micro  lectronique PDF

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Author: LE TIEC Yannick
Publisher: Lavoisier
ISBN: 2746289180
Size: 72.72 MB
Format: PDF, Mobi
Category :
Languages : en
Pages : 384
View: 4828

Book Description: La microélectronique est un monde complexe dans lequel plusieurs sciences comme la physique, l’électronique, l’optique ou la mécanique, contribuent à créer des nano-objets fonctionnels. La chimie est particulièrement impliquée dans de nombreux domaines tels que la synthèse des matériaux, la pureté des fluides, des gaz, des sels, le suivi des réactions chimiques et de leurs équilibres ainsi que la préparation de surfaces optimisées et la gravure sélective de couches spécifiques. Au cours des dernières décennies, la taille des transistors s’est considérablement réduite et la fonctionnalité des circuits électroniques s’est accrue. Cette évolution a conduit à une interpénétration de la chimie et de la microélectronique exposée dans cet ouvrage. Chimie en microélectronique présente les chimies et les séquences utilisées lors des procédés de production de la microélectronique, des nettoyages jusqu’aux gravures des plaquettes de silicium, du rôle et de l’impact de leur niveau de pureté jusqu’aux procédés d’interconnexion des millions de transistors composant un circuit électronique. Afin d’illustrer la convergence avec le domaine de la santé, l’ouvrage expose les nouvelles fonctionnalisations spécifiques, tels que les capteurs biologiques ou les capteurs sur la personne.


Defects In High K Gate Dielectric Stacks

Defects in HIgh k Gate Dielectric Stacks PDF

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Author: NATO Advanced Research Workshop on Defects in advanced High-k dielectric nano-electronic semiconductor devices
Publisher: Springer Science & Business Media
ISBN: 9781402043659
Size: 38.76 MB
Format: PDF
Category : Science
Languages : en
Pages : 492
View: 635

Book Description: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.


Mechanical Stress On The Nanoscale

Mechanical Stress on the Nanoscale PDF

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Author: Margrit Hanbücken
Publisher: John Wiley & Sons
ISBN: 3527639551
Size: 33.98 MB
Format: PDF, ePub, Mobi
Category : Technology & Engineering
Languages : en
Pages : 380
View: 730

Book Description: Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.


Silicon Compatible Materials Processes And Technologies For Advanced Integrated Circuits And Emerging Applications

Silicon Compatible Materials  Processes  and Technologies for Advanced Integrated Circuits and Emerging Applications PDF

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Author: F. Roozeboom
Publisher: The Electrochemical Society
ISBN: 1566778638
Size: 24.93 MB
Format: PDF, ePub
Category :
Languages : en
Pages : 363
View: 4234

Book Description: This issue of ECS Transactions covers emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics : high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.


Reliability Of High K Metal Gate Field Effect Transistors Considering Circuit Operational Constraints

Reliability of high k   metal gate field effect transistors considering circuit operational constraints PDF

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Author: Steve Kupke
Publisher: BoD – Books on Demand
ISBN: 3741208698
Size: 21.18 MB
Format: PDF, ePub, Docs
Category : Technology & Engineering
Languages : en
Pages : 124
View: 1699

Book Description: After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend towards smaller transistor dimensions. The implementation of HfO2, as high-k dielectric, also lead to a substantial number of manufacturing and reliability challenges. The deterioration of the gate oxide properties under thermal and electric stress jeopardizes the circuit operation and hence needs to be comprehensively understood. As a starting point, 6T static random access memory cells were used to identify the different single device operating conditions. The strongest deterioration of the gate stack was found for nMOS devices under positive bias temperature instability (PBTI) stress, resulting in a severe threshold voltage shift and increased gate leakage current. A detailed investigation of physical origin and temperature and voltage dependency was done. The reliability issues were caused by the electron trapping into already existing HfO2 oxygen vacancies. The oxygen vacancies reside in different charge states depending on applied stress voltages. This in return also resulted in a strong threshold voltage and gate current relaxation after stress was cut off. The reliability assessment using constant voltage stress does not reflect realistic circuit operation which can result in a changed degradation behaviour. Therefore, the constant voltage stress measurement were extended by considering CMOS operational constraints, where it was found that the supply voltage frequently switches between the gate and drain terminal. The additional drain (off-state) bias lead to an increased Vt relaxation in comparison to zero bias voltage. The off-state influence strongly depended on the gate length and became significant for short channel devices. The influence of the off-state bias on the dielectric breakdown was studied and compared to the standard assessment methods. Different wear-out mechanisms for drain-only and alternating gate and drain stress were verified. Under drain-only stress, the dielectric breakdown was caused by hot carrier degradation. The lifetime was correlated with the device length and amount of subthreshold leakage. The gate oxide breakdown under alternating gate and o-state stress was caused by the continuous trapping and detrapping behaviour of high-k metal gate devices.


Solid State General 214th Ecs Meeting Prime 2008

Solid State  General    214th ECS Meeting PRiME 2008 PDF

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Author: J. Weidner
Publisher: The Electrochemical Society
ISBN: 1566777216
Size: 25.30 MB
Format: PDF, ePub, Docs
Category : Science
Languages : en
Pages : 113
View: 3876

Book Description: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Solid-State Topics General Session¿, held during the PRiME 2008 joint international meeting of The Electrochemical Society and The Electrochemical Society of Japan, with the technical cosponsorship of the Japan Society of Applied Physics, the Korean Electrochemical Society, the Electrochemistry Division of the Royal Australian Chemical Institute, and the Chinese Society of Electrochemistry. This meeting was held in Honolulu, Hawaii, from October 12 to 17, 2008.


High K Gate Dielectrics For Cmos Technology

High k Gate Dielectrics for CMOS Technology PDF

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Author: Gang He
Publisher: John Wiley & Sons
ISBN: 3527646361
Size: 44.21 MB
Format: PDF, ePub, Mobi
Category : Technology & Engineering
Languages : en
Pages : 590
View: 5790

Book Description: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.